The Photomultiplier Tube (PMT) Detector
PMT detectors typically offer much higher sensitivity than solid state detectors and operate effectively in the UV/VIS and NIR. However, typically their spectral coverage is limited to about 950 nm. PMT detectors also require high voltage power supplies.
The PMT detectors offered by HORIBA Jobin Yvon are high quality PMTs in ambient or water cooled housings and head-on or side-on configurations.
Model |
PMT Type, Cooling & Housing |
Spectral Range |
Notes |
| 1911 (F or G) | R928
multi-alkali PMT Ambient cooled Side window housing |
190-860 nm |
Requires HV source between 200-1200V |
| 1912 (F or G) | S1
R406 PMT Water / TE cooled Side window housing |
400-1100 nm |
Requires HV source and can go to 1500V. Should use current input, although photon counting can be approximated. Also includes 1630C field lens adapter |
| 1913 (F or G) | R943-02
GaAs PMT Water / TE cooled End-on window housing |
200-930 nm |
Photon counting recommended. Requires 1500V for HV supply, can go to 1800V. Also includes 1630C field lens adapter. |
| 1914 (F or G) | R928
multi-alkali PMT Water / TE cooled Side window housing |
190-860 nm |
Requires HV source and can go to 1500V. Use current input or photon counting. Also includes 1630C field lens adapter. |
Solid state detectors are opto-electronic devices used to convert incident photons to electronic signals. Available with wavelength ranges from below 200 nm to beyond 20 µm, solid state detectors offer sensitivity, dependability, cost and efficiency.
HORIBA Jobin Yvon has a large number of solid state detectors that cover any application. They are available as ambient, thermoelectric, or liquid nitrogen cooled depending on your sensitivity needs.
Solid state detectors can be divided into three classes: photoemissive, photoconductive and dual color.
Photoemissive detectors are fast, sensitive detectors which generally do not require lock-in amplifiers and choppers except for low-light applications where a chopper and lock-in are recommended. Their upper spectral range is limited to about 5µm.
Photoconductive detectors are slower and not as sensitive but are available up to 12 µm or beyond. A chopper and lock-in are required with photoconductive detectors.
Dual Color detectors are sandwich detectors with usually a silicon detector in front and a second detector behind. The silicon operates up to 1.1 µm above which it becomes transparent and the second detector cuts in. Detector efficiency of the silicon drops by about 40%, the second detector efficiency remains the same. Dual color detectors incorporating PbS and PbSe require a chopper and lock-in amplifier which are also recommended for rest.
To maximize the sensitivity of the solid state detectors, we offer an Infrared Detector Housing for use with all the DSS detectors. The housing includes an elliptical mirror which concentrates the signal at a 6:1 ratio on a 90 degree beam path. By using mirror optics, the energy is at focus on the detector at all wavelengths.
Type |
Cooling |
Spectral Range |
NEP |
Notes |
| Photoemissive Detectors | ||||
| Silicon (Si) |
Uncooled |
0.2
- 1.1 µm |
- |
Unamplified. Large area 10 x 10 mm. NEP determined by analogue input |
| Silicon (Si) | Uncooled |
0.3
- 1.1 µm |
2
x 10-14 |
Preamplified. Requires ±15V |
| Germanium (Ge) |
Uncooled |
0.8
- 1.8 µm |
7 x 10-13 |
Preamplified. Requires ±15V |
| Germanium (Ge) | TE
Cooled |
0.8
- 1.75 µm |
5
x 10-14 |
Preamplified. Requires ±15V |
| Indium
Gallium Arsenide (InGaAs) |
Uncooled |
0.8
- 1.7 µm |
6
x 10-14 |
Preamplified. Requires ±15V |
| Indium
Gallium Arsenide (InGaAs) |
TE
Cooled |
0.8
- 1.65 µm |
1
x 10-14 |
Preamplified. Requires ±15V |
| Indium
Gallium Arsenide (InGaAs) |
LN
Cooled |
0.8
- 1.6 µm |
1
x 10-15 |
Preamplified. Requires ±15V |
| Indium
Arsenide (InAs) |
Uncooled |
1
- 3.6 µm |
2
x 10-10 |
Preamplified. Requires ±15V |
| Indium
Arsenide (InAs) |
TE
Cooled |
1
- 3.55 µm |
1 x 10-11 |
Preamplified. Requires +/-15V |
| Indium
Antimonide (InSb) |
LN Cooled |
2
- 5.5 µm |
1
x 10-12 |
Preamplified. Requires ±15V |
| Photoconductive Detectors | ||||
| Lead Sulphide (PbS) | Uncooled |
1
- 3 µm |
2
x 10-12 |
Preamplified.
Requires ±15V Chop speed 100-500Hz |
| Lead Sulphide (PbS) | TE
Cooled |
1
- 3 µm |
1 x 10-12 |
Preamplified.
Requires ±15V Chop speed 100-500Hz |
| Lead
Selenide (PbSe) |
Uncooled |
1
- 5 µm |
5
x 10-11 |
Preamplified.
Requires ±15V Chop speed 1KHz |
| Lead
Selenide (PbSe) |
TE
Cooled |
1
- 5 µm |
2
x 10-11 |
Preamplified.
Requires +/-15V Chop speed 1KHz |
| Mercury
Cadmium Telluride (HgCdTe) |
TE
Cooled |
1
- 5 µm* |
1
x 10-11 |
Preamplified.
Requires ± 15V |
| Mercury
Cadmium Telluride (HgCdTe) |
TE
Cooled |
1
- 10 µm* |
1
x 10-8
|
Preamplified.
Requires ± 15V |
| Mercury
Cadmium Telluride (HgCdTe) |
LN
Cooled
|
1
- 14 µm*
|
6
x 10-12
|
Preamplified.
Requires ±15V Chop speed 1KHz. *Wavelength response can be modified with loss in range. |
| Mercury
Cadmium Telluride (HgCdTe) |
LN
Cooled |
1
- 20 µm* |
2
x 10-11 |
Preamplified.
Requires ±15V Chop speed 1KHz. *Wavelength response can be modified with loss in range. |
| Dual Color Detectors | ||||
| Si/InGaAs | Uncooled |
0.3
- 1.7 µm |
- |
Preamplified. Requires ±15V |
| Si/InGaAs | TE
Cooled |
0.3
- 1.65 µm |
- |
Preamplified. Requires ±15V |
| Si/Ge | TE
Cooled |
0.3
- 1.75 µm |
- |
Preamplified. Requires ±15V |
| Si/PbS | TE
Cooled |
0.3
- 3 µm |
- |
Preamplified. Requires ±15V |
| Si/PbSe | TE
Cooled |
0.3
- 5 µm |
- |
Preamplified. Requires ±15V |
| Si/InAs | Uncooled |
0.3
- 3.6 µm |
- |
Preamplified. Requires ±15V |
| Si/InAs |
TE Cooled |
0.3
- 3.55 µm |
- |
Preamplified. Requires ±15V |
