Reference |
Type |
Title |
Brief Summary |
| Semiconductor01 |  |
Strain measurements of a Si cap layer deposited on a SiGe substrate determination of Ge content | Raman spectroscopy is one of the most popular tools for investigating the basic properties of semiconductors. It is particularly efficient in establishing the characteristics of microelectronic devices. |
|
Strained Si for Sub-100nm MOSFETs |
The basic idea in
strained Si CMOS is to modify the carrier transport
properties of Si by introducing strain in order to improve performance
of MOSFETs. |
|
|
Raman Spectroscopy: About Chips and Stress |
Moore's law dictates microelectronics researchers to make integrated circuit (IC) devices smaller and to put them as close to each other as possible on a chip. |
|
|
Integrated Circuits |
A simple Raman measurement made on the surface of an integrated circuit illustrates a straightforward manner to map species like amorphous and crystalline Silicon. |
 |
